著者
浜島 拓美 飴山 惠 冨士 明良
出版者
社団法人日本材料学会
雑誌
材料 (ISSN:05145163)
巻号頁・発行日
vol.44, no.505, pp.1224-1230, 1995-10-15
被引用文献数
1 8

This paper describes the microstructural change of a Ti/Al friction weld interface during heat treatment at 673K, 773K, and 873K. TEM/EDS observations of a commercially pure Al/Ti weld confirmed that only the Al_3Ti phase formed at the weld interface during heat treatment at 773K or 873K, while no intermetallic compound formed during heat treatment at 673K. The Al_3Ti phase was composed of fine equiaxed grains nucleated at the interface boundary and grown up to a few microns in diameter during the heat treatment. Although the Si content was less than 0.12 at% in the commercial Al/Ti weld, approximately 5 at% Si was solved into the Al_3Ti phase and a large amount of Si segregation, almost 20 at%, was detected at the Ti/Al_3Ti interface. No silicide formed during the heat treatment and the sugregation of Si was always observed. The observation of the specimen heat treated at 673K confirmed that Si segregation took place before the formation of the Al_3Ti phase. The faster growth rate of the Al_3Ti phase in the highly pure Al/Ti weld at 873K strongly suggested that the Si segregation retarded growth of the Al_3Ti phase. The growth rate of the Al_3Ti phase heat treated at 873K was in proportion to the square root of the holding time in the early stage of the heat treatment up to 3.6 ksec, while it was linearly proportional to the holding time in the latter stage of the heat treatment.

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工業用AlとTiとを接合するとAlに含まれるSiが接合面に集まり、Al3Tiの成長を抑制するそうです。 検索すると特許等では当たり前と言わんばかりに記載されています。 固体中を選択的にSiが移動するのは、なぜなんでしょうか? 理由が是非知りたいです。 参考です。 http://ci.nii.ac.jp/naid/110002292718

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