著者

Welch Adam Baranowski Lauryn Zawadzki Pawel Lany Stephan Wolden Colin Zakutayev Andriy

出版者

Institute of Physics

雑誌

Appl. Phys. Express (ISSN:18820778)

巻号頁・発行日

vol.8, no.8, 2015-07-06

被引用文献数

80

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Recent technical and commercial successes of existing thin-film solar cell technologies encourage the exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds that do not exhibit conventional tetrahedral semiconductor bonding, such as CuSbSe<inf>2</inf>. CuSbSe<inf>2</inf>has a 1.1 eV optical absorption onset, a 10⁵cm⁻¹absorption coefficient, and a hole concentration of 10¹⁷cm⁻³. Here, we demonstrate CuSbSe<inf>2</inf>PV prototypes with efficiencies >3%, prepared by a self-regulated sputtering process using a conventional substrate device architecture. Bulk recombination, device engineering issues, and a nonideal CuSbSe<inf>2</inf>/CdS band offset likely limit the promising initial result.