- 著者
- Egorov A. Yu. Kalevich V. K. Afanasiev M. M. Shiryaev A. Yu. Ustinov V. M. Ikezawa M. Masumoto Y.
- 出版者
- American Institute of Physics
- 雑誌
- Journal of applied physics (ISSN:00218979)
- 巻号頁・発行日
- vol.98, no.1, pp.013539, 2005-07
- 被引用文献数
- 24
The paper studies the circularly polarized photoluminescence (PL) from dilute GaAsN alloys with nitrogen content of 1%–3.4%, grown on GaAs substrates. The room-temperature PL is found to consist of two bands whose splitting grows with increasing nitrogen content. The analysis of the PL circular polarization has shown that the PL bands originate from the splitting of light- and heavy-hole subbands, induced by an elastic strain in GaAsN layer. The dependence of the energy gap of unstrained GaAsN on the nitrogen content has been calculated using the measured light- and heavy-hole splittings.