- 著者
- Takakura K. Ohyama H. Takarabe K. Suemasu T. Hasegawa F.
- 出版者
- American Institute of Physics
- 雑誌
- Journal of applied physics (ISSN:00218979)
- 巻号頁・発行日
- vol.97, no.09, pp.093716, 2005-04
- 被引用文献数
- 24 13
The hole mobility of intentionally undoped p-type beta-FeSi2 thin films grown by a multilayer method was investigated. With increasing annealing temperature and time, the hole mobility increased to approximately 450 cm2/V s at room temperature (RT). The observed hole mobility was analyzed by considering various carrier scatterings such as acoustic-phonon and polar-optical-phonon scatterings, intervalley scattering, ionized impurity scattering, and grain-boundary scattering. The nice fit of the mobility to the experimental results reveals that the polar-optical-phonon scattering determines the hole mobility at RT.