著者

Shinya Ichino Takezo Mawaki Akinobu Teramoto Rihito Kuroda Shunichi Wakashima Tomoyuki Suwa Shigetoshi Sugawa

出版者

The Institute of Image Information and Television Engineers

雑誌

ITE Transactions on Media Technology and Applications (ISSN:21867364)

巻号頁・発行日

vol.6, no.3, pp.163-170, 2018 (Released:2018-07-01)

参考文献数

37

被引用文献数

5

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Random telegraph noise (RTN) that occurs at in-pixel source follower (SF) transistors and column amplifier is one of the most important issues in CMOS image sensors (CIS) and reducing RTN is a key to the further development of CIS. In this paper, we clarified the influence of transistor shapes on RTN from statistical analysis of SF transistors with various gate shapes including rectangular, trapezoidal and octagonal structures by using an array test circuit. From the analysis of RTN parameter such as amplitude and the current-voltage characteristics by the measurement of a large number of transistors, the influence of shallow trench isolation (STI) edge on channel carriers and the influence of the trap location along source-drain direction are discussed by using the octagonal SF transistors which have no STI edge and the trapezoidal SF transistors which have an asymmetry gate width at source and drain side.