- 著者
- Fukata N. Oshima T. Okada N. Murakami K. Kizuka T. Tsurui T. Ito S.
- 出版者
- American Institute of Physics
- 雑誌
- Journal of applied physics (ISSN:00218979)
- 巻号頁・発行日
- vol.100, no.2, pp.024311, 2006-07
- 被引用文献数
- 44 33
The phonon confinement and self-limiting oxidation effects of silicon nanowires (SiNWs) synthesized by laser ablation were investigated. The size of SiNWs was controlled by the synthesis parameters during laser ablation and the subsequent thermal oxidation. Thermal oxidation increases the thickness of the SiNWs' surface oxide layer, resulting in a decrease in their crystalline Si core diameter. This effect causes a downshift and asymmetric broadening of the Si optical phonon peak due to phonon confinement, while excess oxidation causes an upshift due to compressive stress. The compressive stress retarded the oxidation of the SiNWs by self-limiting oxidation effect. This result shows that the Si core diameter can be controlled by compressive stress.