- 著者
- Chen Shaoqiang Dierre Benjamin Lee Woong Sekiguchi Takashi Tomita Shigeo Kudo Hiroshi Akimoto Katsuhiro
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.96, no.18, pp.181901, 2010
- 被引用文献数
- 32 12
Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.