著者

Yoshida Katsuhisa Okada Yoshitaka Sano Nobuyuki

出版者

American Institute of Physics

雑誌

Applied physics letters (ISSN:00036951)

巻号頁・発行日

vol.97, no.13, pp.133503, 2010-09

被引用文献数

57 30

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In order to design optimum structures for intermediate band solar cells, simulations based on self-consistent drift-diffusion model with a suitable treatment of the intermediate band in device domain are necessary. In this work, we have included the dependence of occupation rate of intermediate band at each position on optical generation rate via the intermediate band. Typical material parameters of GaAs were used except for the absorption coefficient of each corresponding band-to-band transition. Simulation results using our model indicate that the dependence of occupation rate on device position strongly affect short-circuit currents and also electrostatic potentials of the cell.