著者

Makino Kotaro Tominaga Junji Kolobov Alexander V. Fons Paul Hase Muneaki

出版者

American Institute of Physics

雑誌

Applied physics letters (ISSN:00036951)

巻号頁・発行日

vol.101, no.23, pp.232101, 2012-12

被引用文献数

15

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We report the optical perturbation of atomic arrangement in the layered in GeTe/Sb2Te3 phase change memory material. To observe the structural change, the coherent A1 mode of GeTe4 local structure was investigated at various polarization angles of femtosecond pump pulses with the fluence at ≤ 78 μJ/cm2. p-polarization found to be more effective in inducing the A1 frequency shift that can be either reversible or irreversible depending on the pump fluence. The predominant origin of this shift is attributed to rearrangement of Ge atoms driven by anisotropic dissociation of the Ge-Te bonds along the [111] axis after the p-polarized pulse irradiation.