著者
Sekimoto S. Watanabe C. Minami H. Yamamoto T. Kashiwagi T. Klemm Richard A. Kadowaki K.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.103, no.18, pp.182601, 2013-10
被引用文献数
67 5

Using a modified mesa structure of high-Tc superconducting Bi2Sr2CaCu2O8+δ with a thin underlaying base superconductor (∼3 μm), the effective working temperature of the continuous and monochromatic terahertz emitter is extended up to 70 K, and the maximum power of ∼30 μW at 0.44 THz is achieved at the relatively high temperature of T b = 55 K in a low bias current retrapping region. The diverging behavior of the intensity occurring at 55 K in the low current regime without hot spot formation may provide us an important clue for the stronger THz radiation from intrinsic Josephson junction devices.

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