著者

Umeda T. Isoya J. Morishita N. Ohshima T. Kamiya T.

出版者

American Physical Society

雑誌

Physical review B (ISSN:10980121)

巻号頁・発行日

vol.69, pp.121201, 2004-03

被引用文献数

42

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The EI5 and EI6 centers are typical intrinsic defects in radiation-damaged and semi-insulating 4H-SiC. So far, their origins have been assigned to positively charged carbon vacancies (VC+) and silicon antisites (SiC+), respectively. However, our complete set of 29Si hyperfine (HF) data clearly reveals that both the centers should originate from VC+ but their locations are different, i.e., quasicubic sites for EI5 and hexagonal sites for EI6, as recently predicted by the first-principle calculation [M. Bockstedte et al., Phys. Rev. B 67, 193102 (2003)]. The two types of VC+ centers showed remarkable differences in their atomic structures as well as in the temperature dependence of HF interactions, which are closely related to the nature of the two sites.