- 著者
- Harasaki Kouji Tsukuda Masanori Omura Ichiro
- 出版者
- IEEE
- 雑誌
- 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (ISSN:19460201)
- 巻号頁・発行日
- pp.367-370, 2021-06-15
- 被引用文献数
- 1
Digital gate driving methods have been recently proposed to control the IGBT switching transient by dynamically changing the drive power according to the input digital pattern. It has been reported that both surge voltage suppression and turn-off loss reduction can be consistently achieved. In the prior papers, however, the effect is evaluated based on only one optimum point, so that the effect of digital gate driving technology have not been accurately benchmarked for practical use. In this paper, we proposed a new benchmarking method for digital gate driven IGBTs using an approach of Eoff-Vsurge Trade-off shifts. We applied the proposed method to 12 types of IGBT samples and analyzed the benchmarking results.