著者

杉本 健二 坂田 博 磯村 滋宏

出版者

日本シミュレーション学会

雑誌

シミュレーション (ISSN:02859947)

巻号頁・発行日

vol.16, no.2, pp.130-136, 1997-06-15

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Recent development in power semiconductor devices has made remarkable advances in power electronics. Among them, the gate turn-off thyristor (GTO) is one of the most important devices. And the double gate GTO has been proposed newly to realize low turn-off switching loss. Now, the computer simulation for the device is necessary to predict its characteristics. In this study, we use the finite element method and simulate switching characteristics in order to discuss the effects of double gate structure. The relations between storage time and timing of second gate pulse, second gate current, and the trade-off between on-state voltage and turn-off time were discussed.