著者

杉本 健二 坂田 博 磯村 滋宏

出版者

日本シミュレーション学会

雑誌

シミュレーション (ISSN:02859947)

巻号頁・発行日

vol.16, no.2, pp.130-136, 1997-06-15

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Recent development in power semiconductor devices has made remarkable advances in power electronics. Among them, the gate turn-off thyristor (GTO) is one of the most important devices. And the double gate GTO has been proposed newly to realize low turn-off switching loss. Now, the computer simulation for the device is necessary to predict its characteristics. In this study, we use the finite element method and simulate switching characteristics in order to discuss the effects of double gate structure. The relations between storage time and timing of second gate pulse, second gate current, and the trade-off between on-state voltage and turn-off time were discussed.

著者

坂田 博 宮本 宏彰 杉本 健二 菊池 和彦 磯村 滋宏 正田 英介

出版者

The Institute of Electrical Engineers of Japan

雑誌

電気学会論文誌D(産業応用部門誌) (ISSN:09136339)

巻号頁・発行日

vol.113, no.6, pp.728-734, 1993

被引用文献数

1

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Recent development in power electronics has made power semiconductor device larger and complicated, and device simulation is necessary to predict their characteristics. From the fundamental equations of semiconductor device, potential distribution and carrier concentrations can be solved using the finite element method. In this study, we make formulation for one dimensional analysis of a gate turn off thyristor (GTO) and simulate switching characteristics in order to know the effects of snubber circuit. In conclusion snubber condensor is necessary to suppress spike voltage, but increases the turn off loss of GTO.