- 著者
-
大村 悦二
小川 健輔
熊谷 正芳
中野 誠
福満 憲志
森田 英毅
- 出版者
- 一般社団法人日本機械学会
- 雑誌
- 日本機械学會論文集. A編 (ISSN:03875008)
- 巻号頁・発行日
- vol.76, no.764, pp.446-448, 2010-04-25
In stealth dicing (SD), a permeable nanosecond laser is focused inside a silicon wafer and scanned horizontally. A thermal shock wave is propagated every pulse toward the side to which the laser is irradiated, then a high dislocation density layer is formed inside a wafer after the thermal shock wave propagation. In our previous study, it was supposed that an internal crack whose initiation is a dislocation is propagated when the thermal shock wave by the next pulse over-laps with this layer partially. In this study, a two-dimensional thermal elasticity analysis based on the fracture mechanics was conducted. The internal crack propagation was analyzed by calculating the stress intensity factor at the crack tips and comparing with a threshold of that. As a result, validity of the previous hypothesis was suggested.