著者

角屋 豊 山西 正道

出版者

一般社団法人 レーザー学会

雑誌

レーザー研究 (ISSN:03870200)

巻号頁・発行日

vol.23, no.11, pp.1008-1012, 1995

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We have demonstrated that the exciton-polariton mode splitting in semiconductor microcavities can be continuously altered in a wide range, from its maximum to zero, through the change in the exciton oscillator strength. This has been achieved by making use of a quantum confined Stark effect together with angle tuning of the cavity mode. On the basis of the ex-perimental results, we point out a possibility of THz electromagnetic wave radiation from the oscillating dipole associated with the cavity-polariton in biased semiconductor microcavities.