著者

Hirano Ryuichi

出版者

The Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics

巻号頁・発行日

vol.38, no.2, pp.969-971, 1999

被引用文献数

6

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Low Etch pit density 2<SUP>' '</SUP> InP crystals were grown by the liquid-encapsulated Czochralski (LEC) method using a newly developed thermal baffle. The average EPD of Sn-doped InP crystals was reduced to less than 3000 cm<SUP>-2</SUP>. The minimum average EPD was about 200 cm<SUP>-2</SUP>. Visible facets were observed and the crystal was somewhat rectangular. No lineage-type defects were observed even in the last portion of the crystal. Dislocation-free (DF) (EPD&le;500 cm<SUP>-2</SUP>) S-doped InP crystals were also obtained with lower S concentration using the newly developed baffle. The minimum S concentration for growing the DF crystal was 1.7×10<SUP>18</SUP> cm<SUP>-3</SUP>.