著者

Kaizuka Hiroshi Siu Byron

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.27, no.5, pp.L773-L776, 1988

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We present a simple way to compensate for hysteresis and creep in piezoelectric actuators. By inserting a capacitor in series with the piezoelectric actuator, we find a reduction in the size of the hysteresis loop. For a suitable small capacity in series, creep is eliminated.

著者

Byun Jeong Soo Kim Chang Reol Rha Kwan Goo Kim Jae Jeong Kim Woo Shik

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.34, no.2, pp.982-986, 1995

被引用文献数

3

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A new technique for the formation of the TiN/TiSi<SUB>2</SUB> bilayer using a TiN<SUB>x</SUB> layer was described. The TiN<SUB>x</SUB> layer was deposited by sputtering in a mixed gas atmosphere of argon and nitrogen, wherein the concentration of nitrogen was controlled to be lower than that required in the formation of stoichiometric TiN. The nitrogen atoms in the Ti matrix relaxed the mechanical stress of the deposited film and also limited the number of Ti atoms available for the interaction with the Si substrate (i.e., silicidation reaction). Upon thermal annealing, TiN<SUB>x</SUB> changed to the bilayer structure of TiN/TiSi<SUB>2</SUB>, in which the thickness of the overlying TiN was so great that only a rather thin TiSi<SUB>2</SUB> was formed between TiN and the Si substrate. Moreover, TiN had the (111) texture, and TiSi<SUB>2</SUB> formed on the (100)Si substrate was found to show well-aligned epitaxial properties with an extremely uniform thickness.

著者

Zheng Hong Reaney Ian M. Muir Duncan Price Tim Iddles David M.

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.44, no.5, pp.3087-3090, 2005

被引用文献数

14

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BaLa<SUB>4</SUB>Ti<SUB>4</SUB>O<SUB>15</SUB> (BLT) is a hexagonal perovskite-related compound with a temperature coefficient of resonant frequency (τ<SUB>f</SUB>) of −2 ppm/°C, relative permittivity (ε<SUB>r</SUB>)∼44 and figure of merit (<I>Q</I>·<I>f</I>)∼44000 GHz. Ba<SUB>4</SUB>Nd<SUB>9.333</SUB>Ti<SUB>18</SUB>O<SUB>54</SUB> (BNT) has a tungsten-bronze-related structure with ε<SUB>r</SUB>∼78, <I>Q</I>·<I>f</I>≈11000 GHz and τ<SUB>f</SUB> of +47 ppm/°C. The microstructures and microwave dielectric properties of <I>x</I>BNT–(1−<I>x</I>)BLT (0≤<I>x</I>≤1) composite ceramics have been studied. X-ray diffraction analysis and scanning electron microscopy revealed that there was limited inter-reaction between the two phases and that samples were composed largely of BNT and BLT, although some deterioration in measured ε<SUB>r</SUB> with respect to calculated values was observed. The optimum compositions were <I>x</I>=0.55 and 0.75 for which ε<SUB>r</SUB>∼63, τ<SUB>f</SUB>∼−20 ppm/°C and <I>Q</I>·<I>f</I>>10,000 GHz.

著者

Kato Terumasa Sato Makoto Imai Atsuo

出版者

IOP Publishing

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.28, no.2, pp.39, 1989-01-01

著者

Zuerbig Verena Bugaew Natalia Reithmaier Johann Peter Kozub Michał Musiał Anna Sęk Grzegorz Misiewicz Jan

出版者

IOP Publishing

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.51, pp.85501, 2012-07-25

著者

Chen Liang–Yao Hou Xiao–Yuan Huang Da–Ming Hao Ping–Hai Zhang Fu–Long Feng Xing–Wei Qian You–Hua Wang Xun

出版者

社団法人応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.33, no.4, pp.1937-1943, 1994

被引用文献数

9

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Porous-Si samples were optically studied by using the photoluminescence, Raman scattering, the absolute reflectance and ellipsometry methods. Results show that the porous Si has low optical constants, and can trap more than 95% of the visible photons, but give no evidence of a strong interband transition existing in the visible region, especially at the 1.8-eV PL peak position, as suggested by the quantum size effect. The Lorentz oscillator and Bruggeman effective medium approximation (EMA) models were used in data analyses. Calculations indicate that if strong interband transition occurs, an optical structure can be recognized in the spectra, but it was not seen in the experiments. Therefore, a contradiction exists in the PL and optical absorption experiments. Except for other mechanisms, the calculations show that the layer dispersion effect may result in a shift of the luminescence peak for the porous Si. The 1.8-eV PL peak, not always shifted significantly but often seen with consistency in other material structures, strongly indicates the same origin of visible luminescence as those suggested in the literature. A possible mechanism for the luminescence and Raman enhancement as well as the photon trap phenomenon was discussed, and was attributed mainly to random multiple micro-reflections occurring in the porous-Si layer that has extremely large internal micro surfaces.

著者

Yoh Kanji Taniguchi Hiroaki Kiyomi Kazumasa Inoue Masataka

出版者

社団法人応用物理学会

雑誌

Japanese Journal of Applied Physics

巻号頁・発行日

vol.30, no.12, pp.3833-3836, 1991

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We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb/InAs/(Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb/GaSb/(Al<SUB>0.5</SUB>Ga<SUB>0.5</SUB>)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 &mu;m-gate-length GaSb p-channel HFET and 1.2 &mu;m-gate-length InAs n-channel HFETs showed decent <I>I</I>-<I>V</I> characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively.

著者

TAKAHASHI Kazuhiro KAWAGUCHI Satoru SATOH Kohki KAWAGUCHI Hideki TIMOSHKIN Igor GIVEN Martin MACGREGOR Scott

出版者

Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.58, no.2, pp.026001, 2019-01-21

被引用文献数

1

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The concentration variations of reactive oxygen/nitrogen species in water, such as H2O2, NO2 −, and NO3 − generated by pulsed-discharge plasma exposure, are calculated using reaction rates of chemical reactions and acid-base equilibrium in water. The calculated concentrations and pH values are in good agreement with measured data within the range where the significant changes of the measured data are observed. The rate constant for ONOOH generation is estimated to be 7.8 × 103 M−2 s−1, and this value is in good agreement with previously reported values. The generation rates of H2O2, NO2 −, and NO3 − are estimated to be 7.70 × 10−7, 4.10 × 10−7, and 1.10 × 10−7 M s−1, respectively.

著者

Shim Unyob Cahn Sidney B. Kumarakrishnan Anantharaman Sleator Tycho Kim Jin-Tae

出版者

The Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.44, no.1, pp.168-173, 2005

被引用文献数

4

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We have observed optical nutation in cold <SUP>85</SUP>Rb atoms with a negligible Doppler broadening. The optical nutation of a two-level atom arranged by optical pumping has been studied as a function of detuning frequency and Rabi frequency. The change of the nutation signal caused by magnetic substate degeneracy has also been observed for &sigma; and &pi; excitations. This can be explained by optical nutation beatings from different transition probabilities among magnetic sublevels. Absolute transition probabilities with &sigma; and &pi; transitions and a branching ratio between them have been measured.

著者

Min Kyung Sun Huh Youngjae Jae Kim Sung Hoon Wijk Robert Jan van Dubbledam Gert Maaskant Nico

出版者

The Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.37, no.4, pp.2089-2093, 1998

被引用文献数

5

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A new recordable optical disc which has the advantages of low material cost and wavelength dependence was proposed. It consists of a polycarbonate (PC) substrate, a metal thin film, an organic buffer layer, a metal reflective layer and an overcoat. Its recording mechanism was investigated by atomic force microscopy observation of each layer surface and the recording characteristics were evaluated. It was observed that the recording mechanism involves the thermal deformations of the PC substrate, the thin metal film and the organic buffer layer and the recording characteristics are equal to those of a dye-based CD-R.

著者

Hosoda Yasuo Higuchi Takanobu Shida Noriyoshi Imai Tetsuya Iida Tetsuya Kuriyama Kazumi Yokogawa Fumihiko

出版者

The Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.44, no.5, pp.3587-3590, 2005

被引用文献数

4

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We realized an inorganic write-once disk for an optical recording system of the Blu-ray disk format. We developed a new Al alloy for the reflective layer and a Nb-compound oxide nitride material for the dielectric layer. By adopting these materials for the reflective layer and the dielectric layer of our write-once disk, we achieved complete exclusion of toxic substances specified in the pollutant release and transfer register (PRTR) law. That is, this disk did not contain any substances specified in the PRTR law. We confirmed this disk to be compatible with 1&times; to 2&times; recording at the user capacity of 25.0 GB. The bottom jitter values of both 1&times; and 2&times; were less than 6.0%. In addition, we developed another kind of substrate, which was made of a natural polymer derived from corn starch. The bottom jitter value was 6.0% at the user capacity of 25.0 GB with the limit equalizer.

著者

Hirano Ryuichi

出版者

The Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics

巻号頁・発行日

vol.38, no.2, pp.969-971, 1999

被引用文献数

6

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Low Etch pit density 2<SUP>' '</SUP> InP crystals were grown by the liquid-encapsulated Czochralski (LEC) method using a newly developed thermal baffle. The average EPD of Sn-doped InP crystals was reduced to less than 3000 cm<SUP>-2</SUP>. The minimum average EPD was about 200 cm<SUP>-2</SUP>. Visible facets were observed and the crystal was somewhat rectangular. No lineage-type defects were observed even in the last portion of the crystal. Dislocation-free (DF) (EPD&le;500 cm<SUP>-2</SUP>) S-doped InP crystals were also obtained with lower S concentration using the newly developed baffle. The minimum S concentration for growing the DF crystal was 1.7×10<SUP>18</SUP> cm<SUP>-3</SUP>.

著者

Li Tsung-Lung Ting Jyh-Hua

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.44, no.8, pp.6327-6331, 2005

被引用文献数

3

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The temporal saturation effects of the critical dimensions of nanoscale contact holes are investigated by a two-dimensional reaction–diffusion simulator for the chemical shrink techniques of nanolithography. Models included with the simulator are the crosslinking reaction of water-soluble polymers and crosslinkers, the diffusion of photoacids, and the inactivation of photoacids. Within the the statistical errors of the experimental data, the simulation critical dimensions agree with the experiment for baking temperatures over 105°C and for all baking times. It is found that the temporal saturation of the contact holes' critical dimensions can be explained by the photoacid inactivating reaction included in the simulator.

著者

Sekiguchi Atsushi Isono Mariko Matsuzawa Toshiharu

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.38, no.8, pp.4936-4941, 1999

被引用文献数

8

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By incorporating baking equipment into a Fourier transform infrared (FT-IR) spectrometer, a deprotection reaction parameter measurement system that can be used with chemically amplified resists has been developed. This system allows us to study new models for chemically amplified (CA) resists by including into a conventional deprotection reaction model an initial delay effect and a quencher effect. This model is also used to measure deprotection reaction parameters. The parameters thus obtained are inputted into a lithography simulator PROLITH/2 to perform profile simulations. The results are compared with those of scanning electron microscope (SEM) observations. Although the simulation results and SEM observations are not in complete agreement, the general trends observed are in adequate agreement. These results confirm the applicability of the proposed model to CA resists for ArF excimer laser lithography and verify the usefulness of the measurement system.

著者

Sako Teiyu Kimura Yasuyuki Hayakawa Reinosuke Okabe Nobuhiro Suzuki Yoshiichi

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.35, no.2, pp.679-682, 1996

被引用文献数

4

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The Smectic-A (SmA) phases of the antiferroelectric liquid crystals (R)-MHPOBC, (R)-MHPOCBC and slightly racemized MHPOBC (R:S=17:3) have been studied by means of simultaneous measurements of the electric displacement and the tilt angle induced by the electric field. The SmA-SmC<SUB>α</SUB><SUP>*</SUP> phase transition was observed in (R)-MHPOBC and (R)-MHPOCBC, while a phase transition similar to the SmA-SmC<SUP>*</SUP> one was observed in slightly racemized MHPOBC. In both cases, the Landau-type phenomenological theory explains well the critical behavior in the SmA phase, and the coefficients related to the theory can be determined.