- 著者
-
Kitani Asahi
Kimura Yoshinari
Kitamura Masatoshi
Arakawa Yasuhiko
- 出版者
- Institute of Physics
- 雑誌
- Jpn. J. Appl. Phys. (ISSN:00214922)
- 巻号頁・発行日
- vol.55, no.3, 2016-01-07
- 被引用文献数
-
9
The threshold voltage in p-channel organic thin-film transistors (TFTs) having dinaphthothienothiophene as a channel material has been investigated toward their applicability to logic circuits. Oxygen plasma treatment of the gate dielectric surface was carried out to control the threshold voltage. The threshold voltage changed in the range from −6.4 to 9.4 V, depending on plasma treatment time and the thickness of the gate dielectric. The surface charge after plasma treatment was estimated from the dependence of the threshold voltage. Operation of logic inverters consisting of TFTs with different threshold voltages was demonstrated as an application of TFTs with controlled threshold voltage.