著者

Kaizuka Hiroshi Siu Byron

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.27, no.5, pp.L773-L776, 1988

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We present a simple way to compensate for hysteresis and creep in piezoelectric actuators. By inserting a capacitor in series with the piezoelectric actuator, we find a reduction in the size of the hysteresis loop. For a suitable small capacity in series, creep is eliminated.

著者

Tawarayama Kazuo Aoyama Hajime Kamo Takashi Magoshi Shunko Tanaka Yuusuke Shirai Seiichiro Tanaka Hiroyuki

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.48, no.6, pp.06FA02-06FA02-6, 2009-06-25

被引用文献数

6

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The Selete full-field etreme ultraviolet (EUV) exposure tool, the EUV1, was manufactured by Nikon and is being developed at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line and space (L&S) patterns, Selete Standard Resist 03 (SSR3), a numerical aperture (NA) of 0.25, and conventional illumination ($\sigma = 0.8$). The results showed that 25 nm L&S patterns were resolved. Dynamic exposure experiments showed the resolution to be 45 nm across the exposure field and the critical dimension (CD) uniformity across a shot to be 7 nm, which is sufficient for an alpha-level lithography tool.

著者

Cui Guodong Han Dedong Yu Wen Shi Pan Zhang Yi Huang Lingling Cong Yingying Zhou Xiaoliang Zhang Xiaomi Zhang Shengdong Zhang Xing Wang Yi

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.55, no.4, 2016-03-22

被引用文献数

3

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By applying a novel active layer of titanium zinc oxide (TiZO), we have successfully fabricated fully transparent thin-film transistors (TFTs) with a bottom gate structure fabricated on a flexible plastic substrate at low temperatures. The effects of various oxygen partial pressures during channel deposition were studied to improve the device performance. We found that the oxygen partial pressure during channel deposition has a significant impact on the performance of TiZO TFTs, and that the TFT developed under 10% oxygen partial pressure exhibits superior performance with a low threshold voltage (V<inf>th</inf>) of 2.37 V, a high saturation mobility (μ<inf>sat</inf>) of 125.4 cm²V⁻¹s⁻¹, a steep subthreshold swing (SS) of 195 mV/decade and a high I<inf>on</inf>/I<inf>off</inf>ratio of 3.05 × 10⁸. These results suggest that TiZO thin films are promising for high-performance fully transparent flexible TFTs and displays.

著者

Byun Jeong Soo Kim Chang Reol Rha Kwan Goo Kim Jae Jeong Kim Woo Shik

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.34, no.2, pp.982-986, 1995

被引用文献数

3

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A new technique for the formation of the TiN/TiSi<SUB>2</SUB> bilayer using a TiN<SUB>x</SUB> layer was described. The TiN<SUB>x</SUB> layer was deposited by sputtering in a mixed gas atmosphere of argon and nitrogen, wherein the concentration of nitrogen was controlled to be lower than that required in the formation of stoichiometric TiN. The nitrogen atoms in the Ti matrix relaxed the mechanical stress of the deposited film and also limited the number of Ti atoms available for the interaction with the Si substrate (i.e., silicidation reaction). Upon thermal annealing, TiN<SUB>x</SUB> changed to the bilayer structure of TiN/TiSi<SUB>2</SUB>, in which the thickness of the overlying TiN was so great that only a rather thin TiSi<SUB>2</SUB> was formed between TiN and the Si substrate. Moreover, TiN had the (111) texture, and TiSi<SUB>2</SUB> formed on the (100)Si substrate was found to show well-aligned epitaxial properties with an extremely uniform thickness.

著者

Seo Ji Hyun Kim Hoe Min Choi Eun Young Choi Dae Hyuk Park Jung Hwan Yoo Han Seong Kang Hyun Ju Lee Kum Hee Yoon Seung Soo Kim Young Kwan

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.49, no.8, pp.08JG04-08JG04-4, 2010-08-25

被引用文献数

2

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We demonstrated that single-layered red phosphorescent organic light-emitting diodes (OLEDs) can have high a efficiency without carrier transport and injection layers. This high efficiency is caused by the direct injection of carriers from electrodes into a dopant, bis(2-phenylquinoline) iridium(III) (acetylacetonate) [Ir(ppy)2(acac)]. This mechanism is proved by analyzing the single-layered devices with various hosts, 4,4$'$-N,N$'$-dicarbazole-biphenyl (CBP), 9-phenyl-3-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 114), 9-(naphthalen-2-yl)-3-[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 124), and 9-phenyl-3,6-bis[4-(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl]-9H-carbazole (LPGH 153). Among the devices, the single-layered device with LPGH 153 shows a luminous efficiency, a power efficiency, and a quantum efficiency of 9.3 cd/A, 5.2 lm/W, and 6.2%, respectively. The single-layered device with CBP was compared with a multilayered device with CBP. As a result, the single-layered device shows a reduced operating voltage, an enhanced roll-off efficiency, and a pure emitting color in comparison with the multilayered device owing to the direct injection of carriers into a dopant and the suppression of exciplex formation.

著者

Fukagawa Miki Koshiba Yausko Morimoto Masahiro Ishida Kenji

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.56, no.4, 2017-01-25

被引用文献数

5

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The structural, ferroelectric, and piezoelectric properties of poly(vinylidene fluoride–trifluoroethylene) [P(VDF–TrFE)] gels fabricated using poly(pyridinium-1,4-diyliminocarbonyl-1,4-phenylenemethylene thiocyanate) (PICPM-SCN) as a gelator are investigated in this study. The P(VDF–TrFE)/PICPM-SCN composites formed thermally reversible physical gels and their analysis by Fourier transform infrared spectroscopy revealed that the P(VDF–TrFE) molecules in these gels exhibit predominantly the ferroelectric phase I (Form β). Furthermore, the polarization switching peaks of the P(VDF–TrFE)/PICPM-SCN gel films were clearly observed. The coercive electric field for these gel films was estimated to be 2 MV/m, which is dramatically lower than the values typically observed for P(VDF–TrFE) solid films (50 MV/m). Finally, the P(VDF–TrFE)/PICPM-SCN gel films exhibited a piezoelectric response, and the highest piezoelectric coefficient was determined to be ∼53 pm/V at an applied voltage frequency of 4 kHz.

著者

Zheng Hong Reaney Ian M. Muir Duncan Price Tim Iddles David M.

出版者

公益社団法人 応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.44, no.5, pp.3087-3090, 2005

被引用文献数

14

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BaLa<SUB>4</SUB>Ti<SUB>4</SUB>O<SUB>15</SUB> (BLT) is a hexagonal perovskite-related compound with a temperature coefficient of resonant frequency (τ<SUB>f</SUB>) of −2 ppm/°C, relative permittivity (ε<SUB>r</SUB>)∼44 and figure of merit (<I>Q</I>·<I>f</I>)∼44000 GHz. Ba<SUB>4</SUB>Nd<SUB>9.333</SUB>Ti<SUB>18</SUB>O<SUB>54</SUB> (BNT) has a tungsten-bronze-related structure with ε<SUB>r</SUB>∼78, <I>Q</I>·<I>f</I>≈11000 GHz and τ<SUB>f</SUB> of +47 ppm/°C. The microstructures and microwave dielectric properties of <I>x</I>BNT–(1−<I>x</I>)BLT (0≤<I>x</I>≤1) composite ceramics have been studied. X-ray diffraction analysis and scanning electron microscopy revealed that there was limited inter-reaction between the two phases and that samples were composed largely of BNT and BLT, although some deterioration in measured ε<SUB>r</SUB> with respect to calculated values was observed. The optimum compositions were <I>x</I>=0.55 and 0.75 for which ε<SUB>r</SUB>∼63, τ<SUB>f</SUB>∼−20 ppm/°C and <I>Q</I>·<I>f</I>>10,000 GHz.

著者

Sato-Iwanaga Junko Yu Zhiping Dutton Robert Tsuchiya Hideaki

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.55, no.4, 2016-02-29

被引用文献数

1

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The nonlinear characteristics arising from the third-order intermodulation distortion (IMD3) of MOSFETs are investigated by harmonic-balance device simulation. First, to identify the spatial location in a MOSFET, where IMD3 is mostly generated, a conventional n-MOSFET structure is simulated, and it is found that IMD3 generation is located at the top surface over the channel–drain p–n junction where a high lateral electric-field exists. Second, to alleviate the impact of IMD3, we proposed and simulated three types of n-MOSFET structures with a low lateral electric-field around the channel–drain junction. We demonstrated that a low-distortion MOSFET can be realized by optimizing the doping concentration profile at the channel–drain junction. In particular, the introduction of a thin layer of a low-doped n-type surface-channel and a low-doped n-type drain at the top of p-type well and n-type drain regions resulted in a marked IMD3 reduction of as much as 8 dBm in IMD3 power characteristics, in comparison with a conventional structure.

著者

Koshiba Yasuko Nishimoto Mihoko Misawa Asuka Misaki Masahiro Ishida Kenji

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.55, no.3, 2016-02-12

被引用文献数

4

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The thermal behavior of 1,2,4,5-tetracyanobenzene (TCNB), the synthesis of metal-2,3,9,10,16,17,23,24-octacyanophthalocyanine–metal [MPc(CN)<inf>8</inf>–M] (M = Cu, Fe, Ni) complexes by the tetramerization of TCNB, and the growth of MPc(CN)<inf>8</inf>–M nanorods were investigated. By chemical vapor deposition (CVD) in vacuum, MPc(CN)<inf>8</inf>molecules were synthesized and MPc(CN)<inf>8</inf>–M nanorods were formed on all substrates. Among them, CuPc(CN)<inf>8</inf>molecules were synthesized in high yield, and CuPc(CN)<inf>8</inf>–Cu nanorods were deposited uniformly and in high density, with diameters and lengths of 70–110 and 200–700 nm, respectively. The differences in the growth of MPc(CN)<inf>8</inf>–M nanorods were mainly attributed to the stability of the MPc(CN)<inf>8</inf>–M complex, the oxidation of ultrathin metal films, and the diffusion of metal atoms. Additionally, the tetramerization of TCNB by CVD at atmospheric pressure was performed on ultrathin Cu films, and the synthesis of CuPc(CN)<inf>8</inf>molecules was observed by in situ UV–vis spectroscopy. CVD under atmospheric pressure is also useful for the synthesis of CuPc(CN)<inf>8</inf>molecules.

著者

Park Wug-Dong Tanioka Kenkichi

出版者

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

雑誌

Jpn J Appl Phys (ISSN:00214922)

巻号頁・発行日

vol.48, no.4, pp.04C159-04C159-4, 2009-04-25

被引用文献数

4

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The thickness dependence of the avalanche characteristics of a tellurium (Te)-doped amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) target is investigated. To improve the quantum efficiency of the a-Se HARP photoconductive target, a Te-doped a-Se photoconductive layer is sandwiched within a-Se HARP target. The avalanche multiplication factor and hole ionization coefficient of the a-Se HARP target are obtained using the result of photocurrent measurement. The multiplication factor in the avalanche mode exponentially increases with increasing electric field by avalanche multiplication phenomena over the threshold field. The quantum efficiency of the 8-μm-thick a-Se HARP target in the avalanche mode is higher than that of the thin HARP target below 2 μm thickness. Also the spectral response, decay lag, and light-transfer characteristics are studied.

著者

Nagase Toshimi Ooie Toshihiko Makita Yoji KASAISHI Shuji NAKATSUKA Masahiro MIZUTANI Nobuyasu

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.40, no.11, pp.6296-6303, 2001-11-15

被引用文献数

1 9

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Morphology, structure and photoluminescence (PL) properties of zinc oxide (ZnO) films prepared by KrF-excimer-laser irradiation of sol-gel-derived precursors were studied. The precursors with a film thickness of 100 or 180 nm were irradiated by the laser at various energy fluences (Ef). Atomic force microscopy and transmission electron microscopy observations revealed that the laser irradiation at an Ef ≧100mJ/cm^2 produced crystal growth of close-packed ZnO crystals in an upper layer. Laser irradiation at a high Ef (150mJ/cm^2) of the thinner precursor produced a remarkable crystallization throughout the film, resulting in larger grain size and smooth film surface. Our observation results suggest that the crystallization proceeds by sintering or solidification via melting. The films obtained at Ef ≧ 100mJ/cm^2 showed green PL. The PL spectra were not significantly influenced by the excitation wavelength except for the thinner film irradiated at a high Ef (150mJ/cm^2); it showed a striking increase in the green PL intensity when excited at 275 nm instead of 325 nm. The unique excitation-wavelength dependence may be related to its characteristic threshold of electron excitation.

著者

Mohri Akihiro Yuyama Tetsumori Tanaka Hitoshi HIGAKI Hiroyuki YAMAZAWA Yohei MICHISHITA Toshinori

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.39, no.12, pp.6726-6731, 2000-12-15

被引用文献数

1

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Particles of a low current beam can be accumulated in a harmonic potential well in a high vacuum environment when they are repelled back by a local rf electric field of the frequency close to the bounce motion in the well. Here, proper damping mechanisms for the repelled particle blobs are neccessary to suppress their bounce motions. This stacking method was experimentally proved for electron beams of 1.1μA using a Multi-Ring-Electrode trap and the results were compared with numerical estimations based on a single particle model. The observed damping was much larger than the estimated one from the resistive wall effect. The stacking efficiency was nearly the same as the estimated one at the stacked number N less than 1×10^7 but it decreased with N. Experimentally obtained relationship amongst the stacked number, the incident beam energy, the rf frequency and its amplitude behaved qualitatively in the same way as the numerical results. The accumulation proceeded until the well was filled up with electrons.

著者

Kato Terumasa Sato Makoto Imai Atsuo

出版者

IOP Publishing

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.28, no.2, pp.39, 1989-01-01

著者

Zuerbig Verena Bugaew Natalia Reithmaier Johann Peter Kozub Michał Musiał Anna Sęk Grzegorz Misiewicz Jan

出版者

IOP Publishing

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.51, pp.85501, 2012-07-25

著者

Chen Liang–Yao Hou Xiao–Yuan Huang Da–Ming Hao Ping–Hai Zhang Fu–Long Feng Xing–Wei Qian You–Hua Wang Xun

出版者

社団法人応用物理学会

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.33, no.4, pp.1937-1943, 1994

被引用文献数

9

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Porous-Si samples were optically studied by using the photoluminescence, Raman scattering, the absolute reflectance and ellipsometry methods. Results show that the porous Si has low optical constants, and can trap more than 95% of the visible photons, but give no evidence of a strong interband transition existing in the visible region, especially at the 1.8-eV PL peak position, as suggested by the quantum size effect. The Lorentz oscillator and Bruggeman effective medium approximation (EMA) models were used in data analyses. Calculations indicate that if strong interband transition occurs, an optical structure can be recognized in the spectra, but it was not seen in the experiments. Therefore, a contradiction exists in the PL and optical absorption experiments. Except for other mechanisms, the calculations show that the layer dispersion effect may result in a shift of the luminescence peak for the porous Si. The 1.8-eV PL peak, not always shifted significantly but often seen with consistency in other material structures, strongly indicates the same origin of visible luminescence as those suggested in the literature. A possible mechanism for the luminescence and Raman enhancement as well as the photon trap phenomenon was discussed, and was attributed mainly to random multiple micro-reflections occurring in the porous-Si layer that has extremely large internal micro surfaces.

著者

Kirianov Andrei Hagiwara Tomoya Kishi Hiroshi OHSATO Hitoshi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.41, no.11, pp.6934-6937, 2002-11-30

参考文献数

8

著者

TAKAHASHI Kazuhiro KAWAGUCHI Satoru SATOH Kohki KAWAGUCHI Hideki TIMOSHKIN Igor GIVEN Martin MACGREGOR Scott

出版者

Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.58, no.2, pp.026001, 2019-01-21

被引用文献数

1

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The concentration variations of reactive oxygen/nitrogen species in water, such as H2O2, NO2 −, and NO3 − generated by pulsed-discharge plasma exposure, are calculated using reaction rates of chemical reactions and acid-base equilibrium in water. The calculated concentrations and pH values are in good agreement with measured data within the range where the significant changes of the measured data are observed. The rate constant for ONOOH generation is estimated to be 7.8 × 103 M−2 s−1, and this value is in good agreement with previously reported values. The generation rates of H2O2, NO2 −, and NO3 − are estimated to be 7.70 × 10−7, 4.10 × 10−7, and 1.10 × 10−7 M s−1, respectively.

著者

SEWELL Harry

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 1, Regular papers & short notes (ISSN:00214922)

巻号頁・発行日

vol.34, no.12, pp.6622-6630, 1995-12-01

参考文献数

3

被引用文献数

4

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This paper reviews all the major aspects of successfully implementing a &ldquo;mix and match&rdquo; (Deep-UV/I-line, stepper/scanner) strategy. The resolution and linewidth-control limits of I-line are quantified for a number of the process levels and compared with the capabilities of Deep-UV step-and-scan. This analysis predicts the typical mix of steppers and scanners in a 256 MBit production line for 250 nm lithography. A step-by-step procedure to achieve and monitor successful matching is reviewed. The procedure begins by defining a &ldquo;golden system&rdquo;, which is used to produce reference wafers for the setup and monitoring of all the systems being mixed and matched. The reference wafers are used to ensure that the pre-aligners of the systems are calibrated and that offsets are adapted to allow the transfer of wafers between systems. The wafers are also used to match both wafer-stage grid and exposure-field distortions. The matching of both wafer-grid and stepper-field distortions are reviewed. The implementation of stage correction-tables is demonstrated. It is indicated that grid matching to better than 10 nm is achievable. It is also indicated that the dynamic scanning of a step-and-scan system allows the monitoring and correction of such typical stepper problems as field magnification and rotation. The critical aspects of multi-field matching between stepper and scanner are analyzed. The key factors that allow the successful overlaying of large, single, scanned fields with multiple, small, stepped fields are reviewed. The total overlay accuracy achieved using step-and-scan, and &ldquo;mix-and-match&rdquo; is analyzed and demonstrated.

著者

MAGANE Mitsuo ITABASHI Naoshi NISHIWAKI Nobuki GOTO Toshio YAMADA Chikashi HIROTA Eizi

出版者

社団法人応用物理学会

雑誌

Japanese journal of applied physics. Pt. 2, Letters (ISSN:00214922)

巻号頁・発行日

vol.29, no.5, pp.L829-L832, 1990-05-20

被引用文献数

2 31

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Infrared diode laser absorption spectroscopy (IRLAS) was established as the measurement method for the CF radical density. The absolute density of the CF radical and its pressure dependences were measured in DC pulsed CF_4/H_2 discharge plasma. Moreover, from the analysis of the decay parts of the observed transient absorption waveforms of the CF radical, the CF radical was shown to be removed mainly by a diffusion process in the present plasma, yielding the diffusion coefficients D(CF in H_2) and D(CF in CF_4).

著者

Shim Unyob Cahn Sidney B. Kumarakrishnan Anantharaman Sleator Tycho Kim Jin-Tae

出版者

The Japan Society of Applied Physics

雑誌

Japanese Journal of Applied Physics (ISSN:00214922)

巻号頁・発行日

vol.44, no.1, pp.168-173, 2005

被引用文献数

4

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We have observed optical nutation in cold <SUP>85</SUP>Rb atoms with a negligible Doppler broadening. The optical nutation of a two-level atom arranged by optical pumping has been studied as a function of detuning frequency and Rabi frequency. The change of the nutation signal caused by magnetic substate degeneracy has also been observed for &sigma; and &pi; excitations. This can be explained by optical nutation beatings from different transition probabilities among magnetic sublevels. Absolute transition probabilities with &sigma; and &pi; transitions and a branching ratio between them have been measured.