著者

Ko Tsung-Shine Chen Zheng-Wen Lin Der-Yuh Suh Joonki Chen Zheng-Sheng

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.56, no.4, 2017-03-24

被引用文献数

4

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In this study, Ni-doped MoS<inf>2</inf>was grown by chemical vapor transportation. Photoconductivity results reveal that Ni-doped MoS<inf>2</inf>has an obvious doping level of 1.2 eV and an electrical conductivity of σ ≅ 9.92 × 10⁻⁷S cm⁻¹at room temperature, which is lower than that of undoped MoS<inf>2</inf>(σ ≅ 7.913 × 10⁻⁵S cm⁻¹) owing to the impurity state caused by Ni atoms. Hall effect measurement results indicate that Ni-doped MoS<inf>2</inf>sample is of the n-type and has a higher resistance and a lower mobility than undoped MoS<inf>2</inf>. We further fabricated undoped and Ni-doped MoS<inf>2</inf>photodetectors to understand the operation characteristics of MoS<inf>2</inf>-based photodetectors. Persistent photoconductivity shows that both rise and fall times decreased from 0.33/0.68 to 0.14/0.43 s as Ni atoms were doped in MoS<inf>2</inf>PDs. This work shows that Ni atoms could cause small lattice imperfections to form trap states leading to high resistance, low mobility, small activation energy and short decay time. Therefore, doping Ni atoms in MoS<inf>2</inf>is beneficial for the application of photodetectors.