著者

Song Min Yeong Seo Yujeong Kim Yeon Soo Kim Hee Dong An Ho-Myoung Park Bae Ho Sung Yun Mo Kim Tae Geun

出版者

The Japan Society of Applied Physics

雑誌

Applied Physics Express (ISSN:18820778)

巻号頁・発行日

vol.5, no.9, pp.91202-091202-3, 2012-09-25

被引用文献数

20

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The authors report a silicon-based one-diode--type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr--SrTiO3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator--metal transition property of the proposed device was explained using the space-charge--limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio ({\sim}10^{6}), low reset current ({\sim}10^{-11} A), high speed at low voltage (200 ns, 2 V), and reasonable endurance ({>}10^{4} cycles) and retention characteristics ({>}10^{4} s).