- 著者
-
Song Min Yeong
Seo Yujeong
Kim Yeon Soo
Kim Hee Dong
An Ho-Myoung
Park Bae Ho
Sung Yun Mo
Kim Tae Geun
- 出版者
- The Japan Society of Applied Physics
- 雑誌
- Applied Physics Express (ISSN:18820778)
- 巻号頁・発行日
- vol.5, no.9, pp.91202-091202-3, 2012-09-25
- 被引用文献数
-
20
The authors report a silicon-based one-diode--type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr--SrTiO3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator--metal transition property of the proposed device was explained using the space-charge--limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio ({\sim}10^{6}), low reset current ({\sim}10^{-11} A), high speed at low voltage (200 ns, 2 V), and reasonable endurance ({>}10^{4} cycles) and retention characteristics ({>}10^{4} s).