著者

岡崎 健伍 中村 勲 磯村 雅夫

出版者

東海大学

雑誌

東海大学紀要. 工学部 (ISSN:05636787)

巻号頁・発行日

vol.46, no.2, pp.47-54, 2006

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We have developed an optical simulation method to predict the performance of heterojunction with intrinsic thin layer (HIT) solar cells. In this simulation, the energies of reflected and absorbed light in each layer are calculated using the wave equations of electromagnetic waves. The HIT solar cells have combined structures with thin and thick layers. Therefore, we have developed a simulation technique, in which interference effects occur only in thin layers and average intensity is considered in thick layers. The simulation predicts the amount of absorbed light in each layer of the HIT solar cells. The results show that TiO_2, antireflective (AR) layers enhance the current density by about 1.3mA/cm^2, and that one of the problems of HIT solar cells is the optical absorption in p, i and n-type amorphous silicon (a-Si) layers. In accordance with the simulation results, we have developed wide-gap hydrogenated a-Si by reactive sputtering using Ar-H_2 mixture gases. The simulation predicted that the current density of HIT solar cells can be improved by 1.5mA/cm^2 using the developed a-Si, compared with using the conventional wide-gap a-Si.