著者

戸倉 規仁 山本 剛 原 邦彦

出版者

The Institute of Electrical Engineers of Japan

雑誌

電気学会論文誌D(産業応用部門誌) (ISSN:09136339)

巻号頁・発行日

vol.112, no.9, pp.799-806, 1992-09-20 (Released:2008-12-19)

参考文献数

10

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Current sensing function is indispensable to modern intelligent power semiconductor devices to detect whether or not a load is driven at a predetermined power level and/or an overcurrent at the time of overload, in order to protect the load and the power device.In this paper, a new current sensing device technology is presented firstly, in which the operation principle is based on detecting voltage drop through a field effect resistance (FER) consisting of mainly channel resistance in DMOSFET. Our new current sensing device consists of DMOS, FER & voltage sensing cell, and lateral MOSFET operated as a temperature compensation resistor in a same chip. The FER-cell has the same structure as DMOS cell, and lateral MOSFET is electrically isolated from substrate by p-n junction. The accuracy of current sensing is within ±2% in a temperature range from -40 to 150°C.The new current sensing device technology which can be integrated easily into power MOSFETs realizes intelligent power MOSFETs with high accurate current sensing and control in a wide temperature range.