- 著者
- Ootsuka Teruhisa Suemasu Takashi Chen Jun Sekiguchi Takashi Hara Yoshiaki
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.92, no.19, pp.192114, 2008-05
- 被引用文献数
- 14
We have evaluated the lifetime and diffusion length of photogenerated minority carriers (holes) in single-crystalline n-type beta-FeSi2 bulk grown by chemical vapor transport. The diffusion length measured by optical-beam-induced current agreed well with that measured by electron-beam-induced current, that is, 51 and 38 µm, respectively, for samples annealed at 800 °C for 8 h. The decay curve of photoconductivity obtained by 1.31 and 1.55 µm light pulses was well fitted by assuming a carrier lifetime of approximately a few microseconds. The mobility of photogenerated minority carriers was estimated to be approximately 200–360 cm2/V s from the measured lifetime and diffusion length.
- 著者
- Ootsuka Teruhisa Suemasu Takashi Chen Jun Sekiguchi Takashi
- 出版者
- American Institute of Physics
- 雑誌
- APPLIED PHYSICS LETTERS (ISSN:00036951)
- 巻号頁・発行日
- vol.92, no.4, pp.042117, 2008-01
- 被引用文献数
- 13 15
We have evaluated the diffusion length of minority carriers (holes) in single-crystalline n-type beta-FeSi2 bulk grown by chemical vapor transport by means of electron-beam-induced current (EBIC) technique in the edge-scan configuration. The EBIC line-scan data showed a clear exponential dependence of distance from the Al electrode. The diffusion length was estimated to be 20 µm at room temperature, and increased upon high-temperature annealing, reaching approximately 30 µm after annealing at 800 °C for 8 h. This result explained the improvement of photoresponsivity in the Al/n-beta-FeSi2 Schottky diodes by high-temperature annealing.