- 著者
- Ootsuka Teruhisa Suemasu Takashi Chen Jun Sekiguchi Takashi
- 出版者
- American Institute of Physics
- 雑誌
- APPLIED PHYSICS LETTERS (ISSN:00036951)
- 巻号頁・発行日
- vol.92, no.4, pp.042117, 2008-01
- 被引用文献数
- 13 15
We have evaluated the diffusion length of minority carriers (holes) in single-crystalline n-type beta-FeSi2 bulk grown by chemical vapor transport by means of electron-beam-induced current (EBIC) technique in the edge-scan configuration. The EBIC line-scan data showed a clear exponential dependence of distance from the Al electrode. The diffusion length was estimated to be 20 µm at room temperature, and increased upon high-temperature annealing, reaching approximately 30 µm after annealing at 800 °C for 8 h. This result explained the improvement of photoresponsivity in the Al/n-beta-FeSi2 Schottky diodes by high-temperature annealing.