著者
Recht Daniel Hutchinson David Cruson Thomas DiFranzo Anthony McAllister Andrew Said Aurore J. Warrender Jeffrey M. Persans Peter D. Aziz Michael J.
出版者
The Japan Society of Applied Physics
雑誌
Applied physics express (ISSN:18820778)
巻号頁・発行日
vol.5, no.4, pp.41301-041301-3, 2012-04-25
被引用文献数
7

Photoconductivity in silicon hyperdoped with sulfur and selenium above the insulator-to-metal transition was measured via photoinduced changes in the microwave reflectivity of hyperdoped layers formed on p-type silicon. Despite these materials' strong subgap optical absorption, exposing them to 1310 and 1550 nm light results in a change in conductivity per photon 10,000 times smaller than what is observed in untreated silicon exposed to 980 nm light. A similar bound applies for 405 nm light, which is absorbed entirely in the hyperdoped layer. We use these results to deduce that the photocarrier lifetime in the hyperdoped material is {\leq}100 ns.