著者

Morgan Daniel Sultana Mahbuba Fatima Husna Sugiyama Sho Fareed Qhalid Adivarahan Vinod Lachab Mohamed Khan Asif

出版者

The Japan Society of Applied Physics

雑誌

Applied physics express (ISSN:18820778)

巻号頁・発行日

vol.4, no.11, pp.114101-114101-3, 2011-11-25

被引用文献数

1 23

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This letter presents the dc characteristics of normally Off AlInN/AlN/GaN metal--oxide--semiconductor heterostructure field-effect transistors (MOS-HFETs). The devices were fabricated using a recessed gate and SiON dielectric layers for gate isolation. For a device with a 1.5 μm gate length and an 8-μm-long channel, the threshold voltage was above +1.5 V and a maximum drain current density of 0.7 A/mm was reached under 6 V gate bias. These enhancement-mode MOS-HFETs have an excellent potential for power electronics applications.

著者

Zhu Yifan Donda Krupali Fan Shiwang Cao Liyun Assouar Badreddine

出版者

IOP Publishing

雑誌

Applied Physics Express (ISSN:18820778)

巻号頁・発行日

vol.12, no.11, pp.114002, 2019-10-14

著者

Song Min Yeong Seo Yujeong Kim Yeon Soo Kim Hee Dong An Ho-Myoung Park Bae Ho Sung Yun Mo Kim Tae Geun

出版者

The Japan Society of Applied Physics

雑誌

Applied Physics Express (ISSN:18820778)

巻号頁・発行日

vol.5, no.9, pp.91202-091202-3, 2012-09-25

被引用文献数

20

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The authors report a silicon-based one-diode--type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr--SrTiO3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator--metal transition property of the proposed device was explained using the space-charge--limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio ({\sim}10^{6}), low reset current ({\sim}10^{-11} A), high speed at low voltage (200 ns, 2 V), and reasonable endurance ({>}10^{4} cycles) and retention characteristics ({>}10^{4} s).

著者

Recht Daniel Hutchinson David Cruson Thomas DiFranzo Anthony McAllister Andrew Said Aurore J. Warrender Jeffrey M. Persans Peter D. Aziz Michael J.

出版者

The Japan Society of Applied Physics

雑誌

Applied physics express (ISSN:18820778)

巻号頁・発行日

vol.5, no.4, pp.41301-041301-3, 2012-04-25

被引用文献数

7

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Photoconductivity in silicon hyperdoped with sulfur and selenium above the insulator-to-metal transition was measured via photoinduced changes in the microwave reflectivity of hyperdoped layers formed on p-type silicon. Despite these materials' strong subgap optical absorption, exposing them to 1310 and 1550 nm light results in a change in conductivity per photon 10,000 times smaller than what is observed in untreated silicon exposed to 980 nm light. A similar bound applies for 405 nm light, which is absorbed entirely in the hyperdoped layer. We use these results to deduce that the photocarrier lifetime in the hyperdoped material is {\leq}100 ns.