著者

Sato-Iwanaga Junko Yu Zhiping Dutton Robert Tsuchiya Hideaki

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.55, no.4, 2016-02-29

被引用文献数

1

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The nonlinear characteristics arising from the third-order intermodulation distortion (IMD3) of MOSFETs are investigated by harmonic-balance device simulation. First, to identify the spatial location in a MOSFET, where IMD3 is mostly generated, a conventional n-MOSFET structure is simulated, and it is found that IMD3 generation is located at the top surface over the channel–drain p–n junction where a high lateral electric-field exists. Second, to alleviate the impact of IMD3, we proposed and simulated three types of n-MOSFET structures with a low lateral electric-field around the channel–drain junction. We demonstrated that a low-distortion MOSFET can be realized by optimizing the doping concentration profile at the channel–drain junction. In particular, the introduction of a thin layer of a low-doped n-type surface-channel and a low-doped n-type drain at the top of p-type well and n-type drain regions resulted in a marked IMD3 reduction of as much as 8 dBm in IMD3 power characteristics, in comparison with a conventional structure.