著者

H.A. Yu T. Kaneko S. Otani S. Yoshimura A. Oya

出版者

THE CARBON SOCIETY OF JAPAN

雑誌

TANSO (ISSN:03715345)

巻号頁・発行日

vol.1997, no.178, pp.101-107, 1997-07-30 (Released:2010-06-28)

参考文献数

9

被引用文献数

3 4

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It was reported that a photovoltaic cell with carbonaceous film/n-type silicon (C/n-Si) was fabricated utilizing a process in which a carbonaceous film was deposited on an n-type silicon substrate by chemical vapor deposition (CVD) of 2, 5- dimethyl-p-benzoquinone at 500°C The purpose of this work is to study preparation and structure of the carbonaceous film. In this study, the carbonaceous films were made by CVD of 2, 5-dimethyl-p-benzoquinone on a quartz substrate at a temperature between 500 and 1000°C. The 2, 5-dimethyl-p-benzoquinone shows higher reaction activity for carbonization at low temperatures. At low CVD temperatures below 700°C, the carbonization reaction of 2, 5- dimethyl-p-benzoquinone was mainly caused by pyrolysis of its methyl and carbonyl groups. The carbonaceous film deposited at low temperatures below 700°C has a typical amorphous structure, and the one deposited above 700°C has a graphite-like lamellar structure oriented along the substrate.