著者
Yoshida Toshiyuki Hashizume Tamotsu
出版者
American Institute of Physics
雑誌
Applied Physics Letters (ISSN:00036951)
巻号頁・発行日
vol.101, no.12, pp.122102, 2012-09-17
被引用文献数
5

The air-gap capacitance-voltage characteristics of InGaAs surfaces were measured after 1-, 2-, 6-, 9-, and 17-cycle atomic layer deposition (ALD) Al2O3 processing. A high density of mid-gap states was found to be generated and increased during these ALD process steps, while the native oxide component was reduced. On the other hand, the mid-gap state density was drastically reduced after the usual annealing process. The generation of the mid-gap states seemed to be relevant to a non-stoichiometric Al-oxide component associated with a deficit in oxygen atoms, which became re-oxidized during the annealing process.