著者

Yoshida Toshiyuki Hashizume Tamotsu

出版者

American Institute of Physics

雑誌

Applied Physics Letters (ISSN:00036951)

巻号頁・発行日

vol.101, no.12, pp.122102, 2012-09-17

被引用文献数

5

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The air-gap capacitance-voltage characteristics of InGaAs surfaces were measured after 1-, 2-, 6-, 9-, and 17-cycle atomic layer deposition (ALD) Al2O3 processing. A high density of mid-gap states was found to be generated and increased during these ALD process steps, while the native oxide component was reduced. On the other hand, the mid-gap state density was drastically reduced after the usual annealing process. The generation of the mid-gap states seemed to be relevant to a non-stoichiometric Al-oxide component associated with a deficit in oxygen atoms, which became re-oxidized during the annealing process.