- 著者
- Xuan Zhu Chunqing Wu Yuhua Tang Junjie Wu Xun Yi
- 出版者
- 一般社団法人 電子情報通信学会
- 雑誌
- IEICE Electronics Express (ISSN:13492543)
- 巻号頁・発行日
- vol.10, no.5, pp.20130013-20130013, 2013-03-05 (Released:2013-03-05)
- 参考文献数
- 8
- 被引用文献数
- 4
Utilizing memristor to obtain multi-level memory in nano-crossbar is a promising approach to enhance the memory density. In this paper, we proposed a solution for multi-level programming of memristor in nanocrossbar, which can be implemented on nanocrossbar without the need for extra selective devices. Meanwhile, using a general device model, this solution is demonstrated to be adaptive to a wide range of memristors that have been experimentally fabricated through HSPICE simulation.