著者

Toko Kaoru Fukata Naoki Nakazawa Koki Kurosawa Masashi Usami Noritaka Miyao Masanobu Suemasu Takashi

出版者

Elsevier B.V.

雑誌

Journal of crystal growth (ISSN:00220248)

巻号頁・発行日

vol.372, pp.189-192, 2013-06

被引用文献数

15 4

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High-quality crystalline Ge thin films on low-cost glass substrates are desired to reduce the fabrication cost of high-efficiency tandem solar cells. We applied an Al-induced crystallization technique to amorphous-Ge films (50-nm thickness) on SiO2 glass substrates. The annealing temperature of the sample strongly influenced the grain size and the crystal orientation in the grown polycrystalline Ge layers: low annealing temperatures resulted in large grains and high (111)-orientation fractions. As a result, annealing at 325 °C provided 98% (111)-oriented grains with average diameters of 30 μm. Moreover, the grown Ge layers could be used as an epitaxial template for chemical vapor deposition. This large-grained Ge film on a SiO2 substrate appears promising for use as a Ge light-absorbing layer, as well as an epitaxial buffer layer for group III–V compound semiconductors.