著者

Wei Feng Chun Meng Dou Niwa M. Yamada K. Ohmori K.

出版者

Institute of Electrical and Electronics Engineers

雑誌

IEEE Electron Device Letters (ISSN:07413106)

巻号頁・発行日

vol.35, no.1, pp.3-5, 2014-01

被引用文献数

3

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The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (Vg) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic Vg by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.