著者

Wei Feng Chun Meng Dou Niwa M. Yamada K. Ohmori K.

出版者

Institute of Electrical and Electronics Engineers

雑誌

IEEE Electron Device Letters (ISSN:07413106)

巻号頁・発行日

vol.35, no.1, pp.3-5, 2014-01

被引用文献数

3

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The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during the rise/fall edges of the pulsed gate voltage (Vg) cycle was investigated. We have revealed for the first time that the existence of RTN increases Id fluctuations under dynamic Vg by making a comparison between FETs with and without RTN. The initial trap occupation states before varying Vg, which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of Vg. The revealed effects of RTN with different profiles on Id under dynamic Vg will be useful for designing ultrahigh speed circuits.

著者

Tanimoto H. Yamada K. Mizubayashi H. Matsumoto Y. Naramaoto H. Sakai S.

出版者

American Institute of Physics

雑誌

Applied physics letters (ISSN:00036951)

巻号頁・発行日

vol.93, no.15, pp.151919, 2008-10

被引用文献数

7

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C60 films with thicknesses of 100–480 nm were deposited on Si reed substrates under in situ photoirradiation. In anelasticity measurements, no internal friction peaks associated with rotational motions of the C60 molecules were observed, and Young's modulus was 1.5 times larger than that of a pristine C60 material. X-ray diffraction patterns suggested that the face-centered cubic lattice was contracted by about 3% and locally distorted from the pristine C60 material. Raman spectra very similar to those reported for dimerized C60 were also obtained. These characteristics recovered to those of the pristine C60 materials after annealing the C60 films at 523 K. These results indicate uniform dimerization in C60 films deposited under in situ photoirradiation.