著者
Paul G. K. Nawa Y. Sato H. Sakurai T. Akimoto K.
出版者
American Institute of Physics
雑誌
Applied physics letters (ISSN:00036951)
巻号頁・発行日
vol.88, no.14, pp.141901, 2006-04
被引用文献数
88 41

Hole traps in p-type Cu2O were studied by means of deep level transient spectroscopy in the heterostructure of p-Cu2O/i-ZnO/n-ZnO. In addition to the trap level at about 0.45 eV from the valance band edge, which is already reported as being due to Cu vacancy, we found a new trap level at about 0.25 eV. The new trap is tentatively assigned as Cu-di-vacancy from the trap concentration dependence on oxygen flow rate and substrate temperature.