著者

Yuji NAKABAYASHI Satoru YAMADA Satoshi ITOH Takeshi KAWAE

出版者

The Ceramic Society of Japan

雑誌

Journal of the Ceramic Society of Japan (ISSN:18820743)

巻号頁・発行日

vol.126, no.11, pp.925-930, 2018-11-01 (Released:2018-11-01)

参考文献数

32

被引用文献数

12

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Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown α-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the α-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.