- 著者
- Yuji NAKABAYASHI Satoru YAMADA Satoshi ITOH Takeshi KAWAE
- 出版者
- The Ceramic Society of Japan
- 雑誌
- Journal of the Ceramic Society of Japan (ISSN:18820743)
- 巻号頁・発行日
- vol.126, no.11, pp.925-930, 2018-11-01 (Released:2018-11-01)
- 参考文献数
- 32
- 被引用文献数
- 12
Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown α-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the α-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.