- 著者
- Faniel S. Matsuura T. Mineshige S. Sekine Y. Koga T.
- 出版者
- American Physical Society
- 雑誌
- Physical Review B (ISSN:10980121)
- 巻号頁・発行日
- vol.83, no.11, pp.115309, 2011-03-15
- 被引用文献数
- 48
We report the determination of the intrinsic spin-orbit interaction (SOI) parameters for In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) from the analysis of the weak antilocalization effect. We show that the Dresselhaus SOI is mostly negligible in this system and that the intrinsic parameter for the Rashba effect, a_[SO] ≣ 1 α/< Ez >, is given to be a_[SO]m*/m_[e] = (1.46-1.51 x 10^[-17] N_[S] [m^[-2]]) e Å^[2], where α is the Rashba SOI coefficient, < Ez > is the expected electric field within the QW, m*/m_[e] is the electron effective mass ratio, and N_[S] is the sheet carrier density. These values for a_[SO]m* were also confirmed by the observation of beatings in the Shubnikov-de Haas oscillations in our most asymmetric QW sample.
- 著者
- Souma S. Sawada A. Chen H. Sekine Y. Eto M. Koga T.
- 出版者
- American Physical Society
- 雑誌
- Physical review applied (ISSN:23317019)
- 巻号頁・発行日
- vol.4, no.3, pp.34010, 2015-09-29
- 被引用文献数
- 14
We propose a lateral spin-blockade device that uses the interband Rashba effect in a symmetric double quantum well (QW), where the Rashba effect in the conventional sense vanishes because of its inversion symmetry. The interband Rashba effect manifests itself in the off-diagonal term (represented by the parameter eta) in the QW space using the bonding and antibonding basis [Esmerindo Bernardes, John Schliemann, Minchul Lee, J. Carlos Egues, and Daniel Loss, Phys. Rev. Lett. 99, 076603 (2007)]. In such a system, spin selection is possible by tuning the device length, gate electric field and in-plane magnetic field. We particularly show illustrative mechanisms using a one-dimensional model with k = (k(F), 0), where the selected spin can be blocked completely in the presence of the in-plane magnetic field. While the inclusion of the finite k(y) and/or the gate electric field deteriorates the spin polarization P, finite values remain for P (P>11%). Our proposal can also be regarded as an effective way of enhancing a variation of the Rashba-Edelstein effect, the generation of bulk spin polarization by electric current, based on semiconductor band engineering technology.