著者

Nakayama K. Sato T. Dobashi T. Terashima K. Souma S. Matsui H. Takahashi T. Campuzano J. C. Kudo K. Sasaki T. Kobayashi N. Kondo T. Takeuchi T. Kadowaki K. Kofu M. Hirota K.

出版者

American Physical Society

雑誌

Physical review B (ISSN:10980121)

巻号頁・発行日

vol.74, pp.054505, 2006-08

被引用文献数

26

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We have performed systematic angle-resolved photoemission spectroscopy (ARPES) on single-layered cuprate superconductor Bi2Sr2CuO6+delta to elucidate the origin of shadow band. We found that the shadow band is exactly the c(2×2) replica of the main band irrespective of the carrier concentration and its intensity is invariable with respect to temperature, doping, and substitution constituents of block layers. This result rules out the possibility of antiferromagnetic correlation and supports the structural origin of shadow band. ARPES experiments on optimally doped La1.85Sr0.15CuO4 also clarified the existence of the c(2×2) shadow band, demonstrating that the shadow band is not a unique feature of Bi-based cuprates. We conclude that the shadow band is related to the orthorhombic distortion at the crystal surface.

著者

Souma S. Sawada A. Chen H. Sekine Y. Eto M. Koga T.

出版者

American Physical Society

雑誌

Physical review applied (ISSN:23317019)

巻号頁・発行日

vol.4, no.3, pp.34010, 2015-09-29

被引用文献数

14

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We propose a lateral spin-blockade device that uses the interband Rashba effect in a symmetric double quantum well (QW), where the Rashba effect in the conventional sense vanishes because of its inversion symmetry. The interband Rashba effect manifests itself in the off-diagonal term (represented by the parameter eta) in the QW space using the bonding and antibonding basis [Esmerindo Bernardes, John Schliemann, Minchul Lee, J. Carlos Egues, and Daniel Loss, Phys. Rev. Lett. 99, 076603 (2007)]. In such a system, spin selection is possible by tuning the device length, gate electric field and in-plane magnetic field. We particularly show illustrative mechanisms using a one-dimensional model with k = (k(F), 0), where the selected spin can be blocked completely in the presence of the in-plane magnetic field. While the inclusion of the finite k(y) and/or the gate electric field deteriorates the spin polarization P, finite values remain for P (P>11%). Our proposal can also be regarded as an effective way of enhancing a variation of the Rashba-Edelstein effect, the generation of bulk spin polarization by electric current, based on semiconductor band engineering technology.