著者

Umeda T. Isoya J. Ohshima T. Onoda S. Morishita N. Okonogi K. Shiratake S.

出版者

American Institute of Physics

雑誌

Applied physics letters (ISSN:00036951)

巻号頁・発行日

vol.97, no.4, pp.041911, 2010-07

被引用文献数

5

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An electron paramagnetic resonance (EPR) study on fluorine-vacancy defects (FnVm) in fluorine-implanted silicon is demonstrated. Fluorine implantation is an important technology for Si microdevices and EPR measurements showed that this process created a variety of FnVm defects of different sizes (V2, V4, and V5). In FnVm, a Si–F bond exhibited a different chemical nature compared to a Si–H bond in hydrogen-vacancy complexes. The most primitive defect was FV2 (F0 center) and the final types were FnV5 (F1 center) and FnV2 (F2 center) which increased in annealing processes as low temperature as 200 °C.