1 0 0 0 OA Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance
- 著者
- Umeda T. Isoya J. Ohshima T. Onoda S. Morishita N. Okonogi K. Shiratake S.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.97, no.4, pp.041911, 2010-07
- 被引用文献数
- 5
An electron paramagnetic resonance (EPR) study on fluorine-vacancy defects (FnVm) in fluorine-implanted silicon is demonstrated. Fluorine implantation is an important technology for Si microdevices and EPR measurements showed that this process created a variety of FnVm defects of different sizes (V2, V4, and V5). In FnVm, a Si–F bond exhibited a different chemical nature compared to a Si–H bond in hydrogen-vacancy complexes. The most primitive defect was FV2 (F0 center) and the final types were FnV5 (F1 center) and FnV2 (F2 center) which increased in annealing processes as low temperature as 200 °C.
- 著者
- Umeda T. Okonogi K. Ohyu K. Tsukada S. Hamada K. Fujieda S. Mochizuki Y.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.88, pp.253504, 2006-06
- 被引用文献数
- 25 18
The variable retention time phenomenon has recently been highlighted as an important issue in dynamic random access memory (DRAM) technology. Based on electrically detected magnetic resonance and simulation studies, we suggest that a single Si vacancy-oxygen complex defect is responsible for this phenomenon, when the defect is embedded in the near surface drain-gate boundary of a DRAM cell.