- 著者
- Khan M. Ajmal Hara K. O. Du W. Baba M. Nakamura K. Suzuno M. Toko K. Usami N. Suemasu T.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.102, no.11, pp.112107, 2013-03
- 被引用文献数
- 72 15
B-doped p-BaSi2 layer growth by molecular beam epitaxy and the influence of rapid thermal annealing (RTA) on hole concentrations were presented. The hole concentration was controlled in the range between 1017 and 1020 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding 1 × 1020 cm−3 were achieved via dopant activation using RTA at 800 °C in Ar. The activation efficiency was increased up to 10%.