- 著者
- 平山 秀樹 前田 哲利 定 昌史 Khan M. Ajmal 只友 一行 岡田 成仁 山田 陽一
- 出版者
- レーザー学会
- 雑誌
- レーザー研究 = The review of laser engineering : レーザー学会誌 (ISSN:03870200)
- 巻号頁・発行日
- vol.47, no.4, pp.196-203, 2019-04
- 著者
- Khan M. Ajmal Hara Kosuke O. Nakamura Kotaro Du Weijie Baba Masakazu Toh Katsuaki Suzuno Mitsushi Toko Kaoru Usami Noritaka Suemasu Takashi
- 出版者
- Elsevier B.V.
- 雑誌
- Journal of crystal growth (ISSN:00220248)
- 巻号頁・発行日
- vol.378, pp.201-204, 2013-09
- 被引用文献数
- 18 1
We have successfully grown a-axis-oriented p-type BaSi2 films on Si(111) by in situ boron (B) doping using molecular beam epitaxy (MBE). The hole concentration in B-doped BaSi2 was controlled in the range between 1017 and 1019 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level was estimated to be approximately 23 meV.
- 著者
- Nakamura K. Toh K. Baba M. Khan M. Ajmal Du W. Toko K. Suemasu T.
- 出版者
- Elsevier B.V.
- 雑誌
- Journal of crystal growth (ISSN:00220248)
- 巻号頁・発行日
- vol.378, pp.189-192, 2013-09
- 被引用文献数
- 9 4
Al or B layers of a few hundreds of nm in thickness deposited on BaSi2 epitaxial films on Si(1 1 1) substrates were annealed at different temperatures, and the diffusion coefficients of Al and B were evaluated using secondary ion mass spectrometry with O2+. We also investigated the effect of post annealing (850 °C, 10 min) of BaSi2 films on the diffusion coefficients. It was found that both the lattice diffusion and the grain boundary diffusion were decreased by the post-annealing. The plan-view transmission electron microscopy images revealed that the grain size was increased from approximately 0.2 to 0.6 μm by the annealing, and the X-ray diffraction intensities also increased. The activation energies of lattice and grain boundary diffusions in the post-annealed BaSi2 are 0.63 eV and 0.58 eV for Al, and 4.6 eV and 4.4 eV for B, respectively.
- 著者
- Khan M. Ajmal Hara K. O. Du W. Baba M. Nakamura K. Suzuno M. Toko K. Usami N. Suemasu T.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.102, no.11, pp.112107, 2013-03
- 被引用文献数
- 72 15
B-doped p-BaSi2 layer growth by molecular beam epitaxy and the influence of rapid thermal annealing (RTA) on hole concentrations were presented. The hole concentration was controlled in the range between 1017 and 1020 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding 1 × 1020 cm−3 were achieved via dopant activation using RTA at 800 °C in Ar. The activation efficiency was increased up to 10%.