著者

Cui Guodong Han Dedong Yu Wen Shi Pan Zhang Yi Huang Lingling Cong Yingying Zhou Xiaoliang Zhang Xiaomi Zhang Shengdong Zhang Xing Wang Yi

出版者

Institute of Physics

雑誌

Jpn. J. Appl. Phys. (ISSN:00214922)

巻号頁・発行日

vol.55, no.4, 2016-03-22

被引用文献数

3

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By applying a novel active layer of titanium zinc oxide (TiZO), we have successfully fabricated fully transparent thin-film transistors (TFTs) with a bottom gate structure fabricated on a flexible plastic substrate at low temperatures. The effects of various oxygen partial pressures during channel deposition were studied to improve the device performance. We found that the oxygen partial pressure during channel deposition has a significant impact on the performance of TiZO TFTs, and that the TFT developed under 10% oxygen partial pressure exhibits superior performance with a low threshold voltage (V<inf>th</inf>) of 2.37 V, a high saturation mobility (μ<inf>sat</inf>) of 125.4 cm²V⁻¹s⁻¹, a steep subthreshold swing (SS) of 195 mV/decade and a high I<inf>on</inf>/I<inf>off</inf>ratio of 3.05 × 10⁸. These results suggest that TiZO thin films are promising for high-performance fully transparent flexible TFTs and displays.