著者
Fukata N. Sato S. Morihiro H. Murakami K. Ishioka K. Kitajima M. Hishita S.
出版者
American Institute of Physics
雑誌
Journal of applied physics (ISSN:00218979)
巻号頁・発行日
vol.101, no.4, pp.046107, 2007-02
被引用文献数
12 3

The formation of hydrogen (H)-related complexes and H effects on boron (B) and phosphorus (P) dopants was investigated in B- or P-doped silicon (Si) crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different between the p-type and n-type specimens. The difference is likely to be attributable to the formation of H-related defects based on the stable sites of the H atoms, i.e., complicated H multiple trapping centers are formed by bond breaking due to H atoms in only p-type B-doped Si.

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