著者

Fukata N. Chen J. Sekiguchi T. Okada N. Murakami K. Tsurui T. Ito S.

出版者

American Institute of Physics

雑誌

Applied physics letters (ISSN:00036951)

巻号頁・発行日

vol.89, no.20, pp.203109, 2006-11

被引用文献数

54 38

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Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablation were observed at about 618 and 640 cm−1 by Raman scattering measurements. Boron doping was performed during the growth of SiNWs. Fano [Phys. Rev. 124, 1866 (1961)] broadening was also observed in the Si optical phonon peak. These results prove that B atoms were doped in the SiNWs. Hydrogen (H) passivation of B acceptors in the SiNWs was also investigated. A broad peak was observed at around 650–680 cm−1 after hydrogenation, demonstrating that B dopants were passivated by the formation of the well-known H–B passivation centers.