- 著者
- Nagaya K. Motomura K. Kukk E. Fukuzawa H. Wada S. Tachibana T. Ito Y. Mondal S. Sakai T. Matsunami K. Koga R. Ohmura S. Takahashi Y. Kanno M. Rudenko A. Nicolas C. Liu X.-J. Zhang Y. Chen J. Anand M. Jiang Y. H. Kim D.-E. Tono K. Yabashi M. Kono H. Miron C. Yao M. Ueda K.
- 出版者
- American Physical Society
- 雑誌
- Physical Review X (ISSN:21603308)
- 巻号頁・発行日
- vol.6, no.2, 2016-06-16
- 被引用文献数
- 17
X線自由電子レーザーの超短パルスでリボ核酸塩基分子中の電荷と原子の動きを可視化-ヨウ化ウラシルによる放射線増感効果の機構解明. 京都大学プレスリリース. 2016-07-04.
- 著者
- Fukata N. Mitome M. Bando Y. Seoka M. Matsushita S. Murakami K. Chen J. Sekiguchi T.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.93, no.20, pp.203106, 2008-11
- 被引用文献数
- 33 20
Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.
- 著者
- Fukata N. Chen J. Sekiguchi T. Matsushita S. Oshima T. Uchida N. Murakami K. Tsurui T. Ito S.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.90, no.15, pp.153117, 2007-04
- 被引用文献数
- 40 32
Phosphorus (P) doping was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. At least three types of signals were observed by electron spin resonance (ESR) at 4.2 K. Phosphorus doping into substitutional sites of crystalline Si in SiNWs was demonstrated by the detection of an ESR signal with a g value of 1.998, which corresponds to conduction electrons in crystalline Si, and by an energy-dispersive x-ray spectroscopy spectrum of the P Kalpha line. The ESR results also revealed the presence of defects. These defects were partially passivated by hydrogen and oxygen atoms.
1 0 0 0 OA Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation
- 著者
- Fukata N. Chen J. Sekiguchi T. Okada N. Murakami K. Tsurui T. Ito S.
- 出版者
- American Institute of Physics
- 雑誌
- Applied physics letters (ISSN:00036951)
- 巻号頁・発行日
- vol.89, no.20, pp.203109, 2006-11
- 被引用文献数
- 54 38
Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablation were observed at about 618 and 640 cm−1 by Raman scattering measurements. Boron doping was performed during the growth of SiNWs. Fano [Phys. Rev. 124, 1866 (1961)] broadening was also observed in the Si optical phonon peak. These results prove that B atoms were doped in the SiNWs. Hydrogen (H) passivation of B acceptors in the SiNWs was also investigated. A broad peak was observed at around 650–680 cm−1 after hydrogenation, demonstrating that B dopants were passivated by the formation of the well-known H–B passivation centers.